Stretchable semiconductor packages and semiconductor devices including the same

ABSTRACT

A semiconductor package includes an extendible molding member, a chip embedded in the molding member to have a warped shape, and connectors disposed in the molding member. First surfaces of the connectors are exposed at a surface of the molding member, and second surfaces of the connectors are coupled to the chip.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a divisional application of U.S. applicationSer. No. 15/068,877 filed on Mar. 14, 2016, and claims priority under 35U.S.C §119(a) to Korean Patent Application No. 10-2015-0164881, filed onNov. 24, 2015, which is herein incorporated by reference in itsentirety.

BACKGROUND 1. Technical Field

Various embodiments of the present disclosure relate to packages and,more particularly, to stretchable semiconductor packages andsemiconductor devices including the same.

2. Related Art

With the development of smaller electronic systems such as mobilesystems, semiconductor packages which are capable of processing a largeamount of data are increasingly in demand. As electronic systems becomelighter and smaller, the semiconductor packages employed in theelectronic systems have been continuously scaled down. In addition,flexible electronic systems which are capable of bending or warping areincreasingly in demand with an increase interest in portable andwearable electronic systems. Accordingly, flexible semiconductorpackages have been developed to realize the portable and wearableelectronic systems.

In general, flexible semiconductor packages mean semiconductor packageshaving a characteristic in which bodies of the semiconductor packageswarp or bend when an external force is applied to the semiconductorpackages. Recently, however, with the development of internet of things(IoT) and wearable devices, in addition to the flexible semiconductorpackages stretchable semiconductor packages have been desired.Semiconductor chips employed in semiconductor packages have beenfabricated having reduced thickness. Thus, these thinner semiconductorchips may easily warp or bend. However, most of the semiconductor chipsmay still lack a stretchable characteristic, where stretchable refers tothe extendibility of length or width of the semiconductor chip.Accordingly, with today's technology it may be difficult to realizestretchable semiconductor packages including semiconductor chips.

SUMMARY

Various embodiments are directed to stretchable semiconductor packagesand semiconductor devices including the same.

According to an embodiment, a semiconductor package includes anextendible molding member, a chip embedded in the molding member to havea warped shape, and connectors disposed in the molding member. Firstsurfaces of the connectors are exposed at a surface of the moldingmember, and second surfaces of the connectors are coupled to the chip.

According to another embodiment, a semiconductor package includes amolding member comprised of an extendible material, a chip embedded inthe molding member to have a warped shape, and connectors disposed inthe molding member. The molding member includes a first part having awarped shape, a second part extending from one end of the first part tobe flat, and a third part extending from the other end of the first partto be flat. First surfaces of the connectors are exposed at a surface ofthe molding member, and second surfaces of the connectors are coupled tothe chip.

According to another embodiment, a semiconductor device includes asubstrate, a semiconductor package, and joint electrodes. The substrateis comprised of a flexible and extendible material. The substrateincludes conductive patterns disposed therein, and the conductivepatterns are exposed at a surface of the substrate. The semiconductorpackage includes an extendible molding member, a chip embedded in themolding member to have a warped shape, and connectors disposed in themolding member. First surfaces of the connectors are exposed at asurface of the molding member, and second surfaces of the connectors arecoupled to the chip. The joint electrodes connect the conductivepatterns to the connectors.

According to another embodiment, a semiconductor device includes asubstrate, a semiconductor package, and joint electrodes. The substrateis comprised of a flexible and extendible material. The substrateincludes conductive patterns disposed therein, and the conductivepatterns are exposed at a surface of the substrate. The semiconductorpackage includes an extendible molding member, a chip embedded in themolding member to have a warped shape, and connectors disposed in themolding member. First surfaces of the connectors are exposed at asurface of the molding member, and second surfaces of the connectors arecoupled to the chip. The joint electrodes connect the conductivepatterns to the connectors. The molding member includes a first parthaving a warped shape, a second part extending from one end of the firstpart to be flat, and a third part extending from the other end of thefirst part to be flat.

BRIEF DESCRIPTION OF THE DRAWINGS

Various embodiments of a present disclosure will become more apparent inview of the attached drawings and accompanying detailed description, inwhich:

FIG. 1 is a cross-sectional view illustrating a stretchablesemiconductor package according to an embodiment;

FIG. 2 is a cross-sectional view illustrating a stretched shape of thesemiconductor package shown in FIG. 1;

FIG. 3 is a cross-sectional view illustrating a semiconductor deviceincluding the semiconductor package shown in FIG. 1;

FIG. 4 is a cross-sectional view illustrating a stretched shape of thesemiconductor device shown in FIG. 3;

FIG. 5 is a cross-sectional view illustrating a warped shape of thesemiconductor device shown in FIG. 3;

FIG. 6 is a cross-sectional view illustrating another semiconductordevice including the semiconductor package shown in FIG. 1;

FIG. 7 is a cross-sectional view illustrating a stretched shape of thesemiconductor device shown in FIG. 6;

FIG. 8 is a cross-sectional view illustrating a warped shape of thesemiconductor device shown in FIG. 6;

FIG. 9 is a cross-sectional view illustrating a stretchablesemiconductor package according to another embodiment;

FIG. 10 is a cross-sectional view illustrating a stretched shape of thesemiconductor package shown in FIG. 9;

FIG. 11 is a cross-sectional view illustrating a semiconductor deviceincluding the semiconductor package shown in FIG. 9;

FIG. 12 is a cross-sectional view illustrating a stretched shape of thesemiconductor device shown in FIG. 11;

FIG. 13 is a cross-sectional view illustrating a warped shape of thesemiconductor device shown in FIG. 11;

FIG. 14 is a cross-sectional view illustrating another semiconductordevice including the semiconductor package shown in FIG. 9;

FIG. 15 is a cross-sectional view illustrating a stretched shape of thesemiconductor device shown in FIG. 14;

FIG. 16 is a cross-sectional view illustrating a warped shape of thesemiconductor device shown in FIG. 14;

FIG. 17 is a cross-sectional view illustrating a stretchablesemiconductor package according to yet another embodiment;

FIG. 18 is a cross-sectional view illustrating a stretched shape of thesemiconductor package shown in FIG. 17;

FIG. 19 is a cross-sectional view illustrating a semiconductor deviceincluding the semiconductor package shown in FIG. 17;

FIG. 20 is a cross-sectional view illustrating a stretched shape of thesemiconductor device shown in FIG. 19;

FIG. 21 is a cross-sectional view illustrating a warped shape of thesemiconductor device shown in FIG. 19;

FIG. 22 is a cross-sectional view illustrating another semiconductordevice including the semiconductor package shown in FIG. 17;

FIG. 23 is a cross-sectional view illustrating a stretched shape of thesemiconductor device shown in FIG. 22

FIG. 24 is a cross-sectional view illustrating a warped shape of thesemiconductor device shown in FIG. 22; and

FIG. 25 illustrates a block diagram of an example of a representation ofa system employing a stretchable semiconductor package in accordancewith the various embodiments discussed above with relation to FIGS.1-24.

DETAILED DESCRIPTION OF THE EMBODIMENTS

It will be understood that although the terms first, second, third etc.may be used herein to describe various elements, these elements shouldnot be limited by these terms. These terms are only used to distinguishone element from another element. Thus, a first element in someembodiments could be termed a second element in other embodimentswithout departing from the teachings of the present disclosure.

It will also be understood that when an element is referred to as beinglocated “on,” “over,” “above,” “under,” “beneath,” “below,” “beside,” or“aside” another element, the element may directly contact the otherelement, or at least one intervening element may be presenttherebetween. Accordingly, terms such as “on,” “over,” “above,” “under,”“beneath,” “below,” “beside,” “aside,” and the like that are used hereinare for the purpose of describing only a positional relationship of twoelements and are not intended to limit the scope of the presentdisclosure.

It will be further understood that when an element is referred to asbeing “connected” or “coupled” to another element, the element can bedirectly connected or coupled to the other element or interveningelements may be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present between the coupled elements.

FIG. 1 is a cross-sectional view illustrating a stretchablesemiconductor package 100 according to an embodiment. Referring to FIG.1, the semiconductor package 100 may be configured to include a chip 120embedded in a molding member 110. The molding member 110 may becomprised of an extendible material, and thus the molding member may beextendible. The extendible material used as the molding member 110 mayinclude a polymer-based material. The polymer-based material may includea polydimethylsiloxane (PDMS) material, a poly-ethylene-terephthalate(PET) material, a polyimide (PI) material, or a silicone material. Thematerial used as the molding member 110 may also be flexible in additionto extendible. The chip 120 may be a semiconductor chip including activeelements (e.g., transistors) and/or passive elements (e.g., resistors,capacitors or inductors) which are realized in and/or on a semiconductorsubstrate. The chip 120 may be embedded in the molding member 110 in awarped shape. The chip 120 may be thinly fabricated to have a naturallywarped shape. In an embodiment, the chip 120 may have a thickness ofabout 50 micrometers or less. The chip 120 may have a first surface 121and a second surface 122 which are opposite to each other. First contactpads 123 and second contact pads 124 may be disposed on or in the firstsurface 121 of the chip 120. The first contact pads 123 and the secondcontact pads 124 may be disposed on both left and right ends of thefirst surface 121 of the chip 120, respectively. In an embodiment, thefirst contact pads 123 may be disposed on a left end of the chip 120,and the second contact pads 124 may be disposed on a right end of thechip 120. The chip 120 may be a flip chip. That is, the chip 120 may bedisposed in the molding member 110 so that the first surface 121 of thechip 120 faces downward. The chip 120 may be disposed in the moldingmember 110 to have a crying shape. That is, both ends of the chip 120may bend in a downward direction so that the second surface 122 of thechip 120 has a convex shape.

First connectors 131 and second connectors 132 may be disposed in themolding member 110. In an embodiment, first surfaces (i.e., bottomsurfaces in the drawing) of the first and second connectors 131 and 132may be exposed at a bottom surface of the molding member 110. Secondsurfaces of the first and second connectors 131 and 132 may be coupledto the chip 120 via first and second interconnectors 141 and 142.Sidewalls and top surfaces of the first and second connectors 131 and132 may be surrounded by the molding member 110. The first connectors131 may be disposed at a first end (i.e., a lower-left end) of themolding member 110 adjacent to the first contact pads 123. The secondconnectors 132 may be disposed at a second end (i.e., a lower-right end)of the molding member 110 adjacent to the second contact pads 124. In anembodiment, the first and second connectors 131 and 132 may be bumps.

Each of the first contact pads 123 may be electrically connected to oneof the first connectors 131 through one of first interconnectors 141.Each of the second contact pads 124 may be electrically connected to oneof the second connectors 132 through one of second interconnectors 142.The first and second interconnectors 141 and 142 may electricallyconnect the chip 120 to the first and second connectors 131 and 132.Each of the first and second interconnectors 141 and 142 may be aplate-shaped electrode. Specifically, each of the first interconnectors141 may include a first horizontal portion 141 a that contacts a topsurface of one of the first connectors 131 and a first inclined portion141 b that extends from an end of the first horizontal portion 141 a tocontact a surface of one of the first contact pads 123. A first tiltangle θ1 of the first inclined portion 141 b may be substantially equalto the arctangent value of a maximum slope of a left end of the chip120, on which the first contact pads 123 are disposed. Similarly, eachof the second interconnectors 142 may include a second horizontalportion 142 a that contacts a top surface of one of the secondconnectors 132 and a second inclined portion 142 b that extends from anend of the second horizontal portion 142 a to contact a surface of oneof the second contact pads 124. A second tilt angle θ2 of the secondinclined portion 142 b may be substantially equal to the arctangentvalue of a maximum slope of a right end of the chip 120, on which thesecond contact pads 124 are disposed. In an embodiment, the first andsecond interconnectors 141 and 142 may be comprised of a metal material.Although not shown in FIG. 1, a first conductive adhesion material maybe disposed between the first interconnector 141 and the first connector131 as well as between the first interconnector 141 and the firstcontact pad 123, and a second conductive adhesion material may bedisposed between the second interconnector 142 and the second connector132 as well as between the second interconnector 142 and the secondcontact pad 124.

FIG. 2 is a cross-sectional view illustrating a stretched shape of thesemiconductor package 100 shown in FIG. 1. In FIG. 2, the same referencenumerals used in FIG. 1 denote the same elements. Referring to FIG. 2,if a tensile force is applied to both ends of the semiconductor package100 in opposite horizontal directions 210, the molding member 110 mayextend in a horizontal direction. As a result, a vertical thickness ofthe molding member 110 may be reduced compared to an initial verticalthickness of the molding member 110, and a horizontal length of themolding member 110 may increase compared to an initial horizontal lengthof the molding member 110. Accordingly, the chip 120 having a warpedshape may be straightened. Thus, the first connectors 131 and the firstinterconnectors 141 may move in a leftward direction, and the secondconnectors 132 and the second interconnectors 142 may move in arightward direction. In such a case, a tensile stress in the leftwarddirection and the rightward direction as well as a pressure in adownward direction may be applied to the chip 120 so that the chip 120having a warped shape is straightened to a flat form. If the chip 120 isstraightened, the first inclined portion 141 b and the second inclinedportion 142 b may also straighten to be flat. If the semiconductorpackage 100 is fully stretched in a horizontal direction, the firstinclined portion 141 b and the second inclined portion 142 b may becoplanar with the first and second horizontal portions 141 a and 142 aand may be located at a same level as the first and second horizontalportions 141 a and 142 a.

FIG. 3 is a cross-sectional view illustrating a semiconductor device 300including the semiconductor package 100 shown in FIG. 1. In FIG. 3, thesame reference numerals used in FIG. 1 denote the same elements. Thus,to avoid duplicate explanation, description of the same elements as setforth with reference to FIG. 1 will be omitted or briefly mentionedhereinafter. Referring to FIG. 3, the semiconductor device 300 mayinclude the semiconductor package 100 as described with reference toFIG. 1 and a substrate 310 on which the semiconductor package 100 ismounted. In the present embodiment, the substrate 310 may be a printedcircuit board (PCB). For example, the substrate 310 may be a motherboardconstituting an electronic system. The substrate 310 may be comprised ofa material that is flexible and an extendible. The flexible andextendible material used as the substrate 310 may include apolymer-based material. In an embodiment, the polymer-based material mayinclude a polydimethylsiloxane (PDMS) material, apoly-ethylene-terephthalate (PET) material, a polyimide (PI) material,or a silicone material. Interconnection lines 320 may be disposed in thesubstrate 310. Each of the interconnection lines 320 may be comprised ofa conductive material such as a metal material and may have anextendible or stretchable curved line shape. In an embodiment, each ofthe interconnection lines 320 may have a sine wave form, a curved lineshape, or substantially wavy form and may be disposed along a horizontaldirection, for example, a length direction of the substrate 310.

First conductive patterns 331 and second conductive patterns 332 may bedisposed in the substrate 310. Sidewalls and bottom surfaces of thefirst and second conductive patterns 331 and 332 may be surrounded bythe substrate 310, and top surfaces of the first and second conductivepatterns 331 and 332 may be exposed at a top surface of the substrate310. The exposed top surfaces of the first conductive patterns 331 maybe coupled to the first connectors 131 through first joint electrodes341, respectively. Similarly, the exposed top surfaces of the secondconductive patterns 332 may be coupled to the second connectors 132through second joint electrodes 342, respectively. Each of the first andsecond joint electrodes 341 and 342 may be comprised of a conductivematerial, for example, a metal bump, or a solder ball.

FIG. 4 is a cross-sectional view illustrating a stretched shape of thesemiconductor device 300 shown in FIG. 3. In FIG. 4, the same referencenumerals used in FIG. 3 denote the same elements. Referring to FIG. 4,if a tensile force is applied to both ends of the substrate 310 inopposite horizontal directions 410, the substrate 310 may extend in theopposite horizontal directions 410. In such a case, a tensile force mayalso be applied to both ends of the semiconductor package 100, which maybe attached to the substrate 310 using a soldering technique, inopposite horizontal directions 420. Accordingly, as described withreference to FIG. 2, the molding member 110 may extend in the horizontaldirection so that a warped shaped chip 120 is straightened to have aflat form. As a result, the semiconductor device 300 may be stretched inthe horizontal direction.

FIG. 5 is a cross-sectional view illustrating a warped shape of thesemiconductor device 300 shown in FIG. 3. In FIG. 5, the same referencenumerals used in FIG. 3 denote the same elements. Referring to FIG. 5,if an external force is applied to both ends of the substrate 310 in anupward direction 430, both ends of the substrate 310 may warp upwardlyso that the substrate 310 has a smile shape. In such a case, thesemiconductor package 100, which may be attached to the substrate 310using a soldering technique, may also warp to have the same shape as thesubstrate 310. As a result, the chip 120 in the molding member 110 maybe straightened to have a flat form.

FIG. 6 is a cross-sectional view illustrating another semiconductordevice 500 including the semiconductor package 100 shown in FIG. 1. InFIG. 6, the same reference numerals used in FIG. 1 denote the sameelements. Thus, to avoid duplicate explanation, description of the sameelements as set forth with reference to FIG. 1 will be omitted orbriefly mentioned hereinafter. Referring to FIG. 6, the semiconductordevice 500 may be configured to include an underfill layer 510 disposedbetween the semiconductor package 100 and the substrate 310. Theunderfill layer 510 may be comprised of an extendible or stretchablematerial. Alternatively, the underfill layer 510 may be comprised of anextendible and flexible material. In an embodiment, the underfill layer510 may be comprised of substantially the same material as the moldingmember 110 or the substrate 310. A bottom surface and a top surface ofthe underfill layer 510 may be attached to a top surface of thesubstrate 310 and a bottom surface of the molding member 110,respectively. The underfill layer 510 may be disposed to surround andattach to sidewalls of the first and second joint electrodes 341 and342. When the semiconductor device 500 extends or warps, the underfilllayer 510 may also extend or warp. In such a case, the underfill layer510 may improve coherence between the semiconductor package 100 and thesubstrate 310. In addition, the underfill layer 510 may enhance acombination strength between the first connectors 131, the firstconductive patterns 331 and the first joint electrodes 341 as well as acombination strength between the second connectors 132, the secondconductive patterns 332 and the second joint electrodes 342.

FIG. 7 is a cross-sectional view illustrating a stretched shape of thesemiconductor device 500 shown in FIG. 6. In FIG. 7, the same referencenumerals used in FIG. 6 denote the same elements. Referring to FIG. 7,if a tensile force is applied to both ends of the substrate 310 inopposite horizontal directions 440, the substrate 310 may extend in ahorizontal direction. In such a case, a tensile force may also beapplied to both ends of the semiconductor package 100 and both ends ofthe underfill layer 510 may extend in opposite horizontal directions450. Accordingly, as described with reference to FIG. 2, the moldingmember 110 may extend in the horizontal direction so that a warpedshaped chip 120 gets straightened to a flat form. When the substrate 310extends in the horizontal direction, the underfill layer 510 may alsoextend in the horizontal direction to increase the tensile force appliedto the semiconductor package 100. Accordingly, the semiconductor device500 may be more readily stretched in the horizontal direction.

FIG. 8 is a cross-sectional view illustrating a warped shape of thesemiconductor device 500 shown in FIG. 6. In FIG. 8, the same referencenumerals used in FIG. 6 denote the same elements. Referring to FIG. 8,if an external force is applied to both ends of the substrate 310 in anupward direction 460, both ends of the substrate 310 may warp upwardlyso that the substrate 310 and the underfill layer 510 have a smileshape. In such a case, the semiconductor package 100 may also warp tohave the same shape as the substrate 310 and the underfill layer 510. Asa result, the chip 120 having a warped shape in a straight or flatmolding member 110 may be straightened to have a flat form.

FIG. 9 is a cross-sectional view illustrating a stretchablesemiconductor package 600 according to another embodiment. Referring toFIG. 9, the semiconductor package 600 may be configured to include achip 620 embedded in a molding member 610. The molding member 610 may becomprised of an extendible material. The extendible material used as themolding member 610 may include a polymer-based material. Thepolymer-based material may include a polydimethylsiloxane (PDMS)material, a poly-ethylene-terephthalate (PET) material, a polyimide (PI)material, or a silicone material. The material used as the moldingmember 610 may include a flexible material in addition to the extendiblematerial. The chip 620 may be a semiconductor chip including activeelements (e.g., transistors) and/or passive elements (e.g., resistors,capacitors or inductors) which are realized in and/or on a semiconductorsubstrate. The chip 620 may be embedded in the molding member 610 in awarped shape. The chip 620 may be thinly fabricated to have a naturallywarped shape. In an embodiment, the chip 620 may have a thickness ofabout 50 micrometers or less. The chip 620 may have a first surface 621and a second surface 622 which are opposite to each other. First contactpads 623 and second contact pads 624 may be disposed on or in the firstsurface 621 of the chip 620. The first contact pads 623 and the secondcontact pads 624 may be disposed on both ends of the first surface 621of the chip 620, respectively. In an embodiment, the first contact pads623 may be disposed on a left end of the chip 620, and the secondcontact pads 624 may be disposed on a right end of the chip 620. Thechip 620 may be a flip chip. That is, the chip 620 may be disposed inthe molding member 610 so that the first surface 621 of the chip 620faces downward. The chip 620 may be disposed in the molding member 610to have a crying shape. That is, both ends of the chip 620 may bend in adownward direction so that the second surface 622 of the chip 620 has aconvex shape.

First connectors 631 and second connectors 632 may be disposed in themolding member 610. In an embodiment, first surfaces (i.e., bottomsurfaces in the drawing) of the first and second connectors 631 and 632may be exposed at a bottom surface of the molding member 610. Secondsurfaces of the first and second connectors 631 and 632 may be coupledto the chip 620 via the first and second contact pads 623 and 624.Sidewalls and top surfaces of the first and second connectors 631 and632 may be surrounded by the molding member 610. In an embodiment, thefirst and second connectors 631 and 632 may be bumps. Top surfaces ofthe first connectors 631 may be attached to the first contact pads 623,respectively. Top surfaces of the second connectors 632 may be attachedto the second contact pads 624, respectively. The first connectors 631and the second connectors 632 may be disposed to be inclined at acertain angle. That is, the first connectors 631 may be inclined at afirst tilt angle θ3 with respect to a vertical line A, and the secondconnectors 632 may be inclined at a second tilt angle θ4 with respect toa vertical line B. The first and second tilt angles θ3 and θ4 may bedetermined by a curvature of the chip 620. Although not shown in FIG. 9,a conductive adhesion material may be disposed between the firstconnector 631 and the first contact pad 623 as well as between thesecond connector 632 and the second contact pad 624.

FIG. 10 is a cross-sectional view illustrating a stretched shape of thesemiconductor package 600 shown in FIG. 9. In FIG. 10, the samereference numerals used in FIG. 9 denote the same elements. Referring toFIG. 10, if a tensile force is applied to both ends of the semiconductorpackage 600 in opposite horizontal directions 710, the molding member610 may extend in a horizontal direction. As a result, a verticalthickness of the molding member 610 may be reduced compared to aninitial thickness of the molding member 610, and a horizontal length ofthe molding member 610 may increase compared to an initial length of themolding member 610. Accordingly, the chip 620 having a warped shape maybe straightened. Thus, the first connectors 631 may move in a leftwarddirection to be substantially vertical, and the second connectors 632may move in a rightward direction to be substantially vertical. In sucha case, a tensile stress in the leftward direction and the rightwarddirection as well as a pressure in a downward direction may be appliedto the chip 620 so that a warped shape chip 620 gets straightened tohave a flat form. If the chip 620 gets straightened to have a flat form,the first connectors 631 and the second connectors 632 may be verticallyerect.

FIG. 11 is a cross-sectional view illustrating a semiconductor device800 including the semiconductor package 600 shown in FIG. 9. In FIG. 11,the same reference numerals used in FIG. 9 denote the same elements.Thus, to avoid duplicate explanation, description of the same elementsas set forth with reference to FIG. 9 will be omitted or brieflymentioned hereinafter. Referring to FIG. 11, the semiconductor device800 may include the semiconductor package 600 described with referenceto FIG. 9 and a substrate 810 on which the semiconductor package 600 ismounted. In the present embodiment, the substrate 810 may be a printedcircuit board (PCB). For example, the substrate 810 may be a motherboardconstituting an electronic system. The substrate 810 may be comprised ofa flexible and extendible material. The flexible and extendible materialused as the substrate 810 may include a polymer-based material. In anembodiment, the polymer-based material may include apolydimethylsiloxane (PDMS) material, a poly-ethylene-terephthalate(PET) material, a polyimide (PI) material, or a silicone material.Interconnection lines 820 may be disposed in the substrate 810. Each ofthe interconnection lines 820 may be comprised of a conductive materialsuch as a metal material and may have a curved line shape to beextendible or stretchable. In an embodiment, each of the interconnectionlines 820 may have a sine wave form and may be disposed along ahorizontal direction, for example, a length direction of the substrate810.

First conductive patterns 831 and second conductive patterns 832 may bedisposed in the substrate 810. Sidewalls and bottom surfaces of thefirst and second conductive patterns 831 and 832 may be surrounded bythe substrate 810, and top surfaces of the first and second conductivepatterns 831 and 832 may be exposed at a top surface of the substrate810. The exposed top surfaces of the first conductive patterns 831 maybe coupled to the first connectors 631 through first joint electrodes841, respectively. Similarly, the exposed top surfaces of the secondconductive patterns 832 may be coupled to the second connectors 632through second joint electrodes 842, respectively. Each of the first andsecond joint electrodes 841 and 842 may be comprised of a conductivematerial, and may comprise, for example, a metal bump, or a solder ball.

FIG. 12 is a cross-sectional view illustrating a stretched shape of thesemiconductor device 800 shown in FIG. 11. In FIG. 12, the samereference numerals used in FIG. 11 denote the same elements. Referringto FIG. 12, if a tensile force is applied to both ends of the substrate810 in opposite horizontal directions 910, the substrate 810 may extendin a horizontal direction. In such a case, a tensile force may also beapplied to both ends of the semiconductor package 600, which may beattached to the substrate 810 using a soldering technique, in oppositehorizontal directions 920. Accordingly, as described with reference toFIG. 10, the molding member 610 may extend in the horizontal directionso that the previously warped shaped chip 620 gets straightened to havea flat form. As a result, the semiconductor device 800 may be stretchedin the horizontal direction.

FIG. 13 is a cross-sectional view illustrating a warped shape of thesemiconductor device 800 shown in FIG. 11. In FIG. 13, the samereference numerals used in FIG. 11 denote the same elements. Referringto FIG. 13, if an external force is applied to both ends of thesubstrate 810 in an upward direction 930, both ends of the substrate 810may warp upwardly so that the substrate 810 has a smile shape. In such acase, the semiconductor package 600, which may be attached to thesubstrate 810 using a soldering technique, may also warp to have thesame shape as the substrate 810. As a result, the chip 620 in themolding member 610 may be straightened to have a flat form.

FIG. 14 is a cross-sectional view illustrating another semiconductordevice 1000 including the semiconductor package 600 shown in FIG. 9. InFIG. 14, the same reference numerals used in FIG. 9 denote the sameelements. Thus, to avoid duplicate explanation, description of the sameelements as set forth with reference to FIG. 9 will be omitted orbriefly mentioned hereinafter. Referring to FIG. 14, the semiconductordevice 1000 may be configured to include an underfill layer 1010disposed between the semiconductor package 600 and the substrate 810.The underfill layer 1010 may be comprised of an extendible material or astretchable material. Alternatively, the underfill layer 1010 may becomprised of an extendible and flexible material. In an embodiment, theunderfill layer 1010 may be comprised of substantially the same materialas the molding member 610 or the substrate 810. A bottom surface and atop surface of the underfill layer 1010 may be attached to a top surfaceof the substrate 810 and a bottom surface of the molding member 610,respectively. The underfill layer 1010 may be disposed to surround andattach to sidewalls of the first and second joint electrodes 841 and842. When the semiconductor device 1000 extends or warps, the underfilllayer 1010 may also extend or warp. In such a case, the underfill layer1010 may improve coherence between the semiconductor package 600 and thesubstrate 810. In addition, the underfill layer 1010 may enhance acombination strength between the first connectors 631, the firstconductive patterns 831, and the first joint electrodes 841 as well as acombination strength between the second connectors 632, the secondconductive patterns 832, and the second joint electrodes 842.

FIG. 15 is a cross-sectional view illustrating a stretched shape of thesemiconductor device 1000 shown in FIG. 14. In FIG. 15, the samereference numerals used in FIG. 14 denote the same elements. Referringto FIG. 15, if a tensile force is applied to both ends of the substrate810 in opposite horizontal directions 940, the substrate 810 may extendin opposite horizontal directions. In such a case, a tensile force mayalso be applied to both ends of the semiconductor package 600 and bothends of the underfill layer 1010 in opposite horizontal directions 950.Accordingly, as described with reference to FIG. 10, the molding member610 may extend in the horizontal direction so that the warped shapedchip 620 gets straightened to have a flat form. When the substrate 810extends in the horizontal direction, the underfill layer 1010 may alsoextend in the horizontal direction to increase the tensile force appliedto the semiconductor package 600. Accordingly, the semiconductor device1000 may be readily stretched in the horizontal direction.

FIG. 16 is a cross-sectional view illustrating a warped shape of thesemiconductor device 1000 shown in FIG. 14. In FIG. 16, the samereference numerals used in FIG. 14 denote the same elements. Referringto FIG. 16, if an external force is applied to both ends of thesubstrate 810 in an upward direction 960, both ends of the substrate 810may warp upwardly so that the substrate 810 and the underfill layer 1010have a smile shape. In such a case, the semiconductor package 600 mayalso warp to have the same shape as the substrate 810 and the underfilllayer 1010. As a result, the warped shaped chip 620 in the moldingmember 610 may be straightened to have a flat form.

FIG. 17 is a cross-sectional view illustrating a stretchablesemiconductor package 1100 according to yet another embodiment.Referring to FIG. 17, the semiconductor package 1100 may be configuredto include a chip 1120 embedded in a molding member 1110. The moldingmember 1110 may be comprised of an extendible material. The extendiblematerial used as the molding member 1110 may include a polymer-basedmaterial. The polymer-based material may include a polydimethylsiloxane(PDMS) material, a poly-ethylene-terephthalate (PET) material, apolyimide (PI) material, or a silicone material. The material used asthe molding member 1110 may include a flexible material in addition tothe extendible material. The molding member 1110 may include a firstpart 1111 having a warped shape, a second part 1112 extending from oneend of the first part 1111 to have a flat form, and a third part 1113extending from the other end of the first part 1111 to have a flat form.Both ends of the first part 1111 of the chip 1120 may bend in a downwarddirection to be located at a lower level than a central portion of thefirst part 1111 of the chip 1120. For example, the first part 1111 ofthe molding member 1110 may have a crying shape, as illustrated.

The chip 1120 may be a semiconductor chip including active elements(e.g., transistors) and/or passive elements (e.g., resistors, capacitorsor inductors) which are realized in and/or on a semiconductor substrate.The chip 1120 may be embedded in the molding member 1110 in a warpedshape. The chip 1120 may be thinly fabricated to have a naturally warpedshape. In an embodiment, the chip 1120 may have a thickness of about 50micrometers or less. The chip 1120 may have a first surface 1121 and asecond surface 1122 which are opposite to each other. First contact pads1123 and second contact pads 1124 may be disposed on or in the firstsurface 1121 of the chip 1120. The first contact pads 1123 and thesecond contact pads 1124 may be disposed on both ends of the firstsurface 1121 of the chip 1120, respectively. In an embodiment, the firstcontact pads 1123 may be disposed on a left end of the chip 1120, andthe second contact pads 1124 may be disposed on a right end of the chip1120. The chip 1120 may be a flip chip. That is, the chip 1120 may bedisposed in the molding member 1110 so that the first surface 1121 ofthe chip 1120 faces downward. The chip 1120 may be disposed in themolding member 1110 to have a crying shape. That is, both ends of thechip 1120 may bend in a downward direction so that the second surface1122 of the chip 1120 has a convex shape.

First connectors 1131 and second connectors 1132 may be disposed in themolding member 1110. Particularly, the first connectors 1131 may bedisposed in the second part 1112 of the molding member 1110, and thesecond connectors 1132 may be disposed in the third part 1113 of themolding member 1110. In an embodiment, first surfaces (i.e., bottomsurfaces in the drawing) of the first connectors 1131 may be exposed ata bottom surface of the second part 1112 of the molding member 1110, andfirst surfaces (i.e., bottom surfaces in the drawing) of the secondconnectors 1132 may be exposed at a bottom surface of the third part1113 of the molding member 1110. Second surfaces of the first and secondconnectors 1131 and 1132 may be coupled to the chip 1120 via first andsecond interconnectors 1141 and 1142. Sidewalls and top surfaces of thefirst and second connectors 1131 and 1132 may be surrounded by themolding member 1110. In an embodiment, the first and second connectors1131 and 1132 may be bumps.

Each of the first contact pads 1123 may be electrically connected to oneof the first connectors 1131 through one of first interconnectors 1141.The first interconnectors 1141 may be disposed in the second part 1112of the molding member 1110 and may extend into the first part 1111 ofthe molding member 1110. Each of the second contact pads 1124 may beelectrically connected to one of the second connectors 1132 through oneof second interconnectors 1142. The second interconnectors 1142 may bedisposed in the third part 1113 of the molding member 1110 and mayextend into the first part 1111 of the molding member 1110. The firstand second interconnectors 1141 and 1142 may electrically connect thechip 1120 to the first and second connectors 1131 and 1132. Each of thefirst and second interconnectors 1141 and 1142 may be a plate-shapedelectrode. Specifically, each of the first interconnectors 1141 mayinclude a first horizontal portion 1141 a that contacts a top surface ofone of the first connectors 1131 and a first inclined portion 1141 bthat extends from an end of the first horizontal portion 1141 a tocontact a surface of one of the first contact pads 1123. A first tiltangle θ5 of the first inclined portion 1141 b may be substantially equalto the arctangent value of a maximum slope of a left end of the chip1120, on which the first contact pads 1123 are disposed. Similarly, eachof the second interconnectors 1142 may include a second horizontalportion 1142 a that contacts a top surface of one of the secondconnectors 1132 and a second inclined portion 1142 b that extends froman end of the second horizontal portion 1142 a to contact a surface ofone of the second contact pads 1124. A second tilt angle θ6 of thesecond inclined portion 1142 b may be substantially equal to thearctangent value of a maximum slope of a right end of the chip 1120, onwhich the second contact pads 1124 are disposed. In an embodiment, thefirst and second interconnectors 1141 and 1142 may be comprised of ametal material. Although not shown in FIG. 17, a first conductiveadhesion material may be disposed between the first interconnector 1141and the first connector 1131 as well as between the first interconnector1141 and the first contact pad 1123, and a second conductive adhesionmaterial may be disposed between the second interconnector 1142 and thesecond connector 1132 as well as between the second interconnector 1142and the second contact pad 1124.

FIG. 18 is a cross-sectional view illustrating a stretched shape of thesemiconductor package 1100 shown in FIG. 17. In FIG. 18, the samereference numerals used in FIG. 17 denote the same elements. Referringto FIG. 18, if a tensile force is applied to both ends of thesemiconductor package 1100 in opposite horizontal directions 1210, thefirst part 1111 of the molding member 1110 may extend in a horizontaldirection to have a flat form. Accordingly, the warped shaped chip 1120may be straightened. As the molding member 1110 is stretched in ahorizontal direction to have a flat form, the first connectors 1131 andthe first interconnectors 1141 may move in a leftward direction, and thesecond connectors 1132 and the second interconnectors 1142 may move in arightward direction. In such a case, a tensile stress in the leftwarddirection and the rightward direction as well as a pressure in adownward direction may be applied to the chip 1120 so that the warpedshaped chip 1120 gets straightened to have a flat form. If the chip 1120gets straightened, the first inclined portion 1141 b and the secondinclined portion 1142 b may also be straightened to be flat. If thesemiconductor package 1100 is fully stretched in a horizontal direction,the first inclined portion 1141 b and the second inclined portion 1142 bmay be coplanar with the first and second horizontal portions 1141 a and1142 a and may be located at substantially the same level as the firstand second horizontal portions 1141 a and 1142 a. In addition, if thesemiconductor package 1100 is fully stretched in a horizontal direction,a bottom surface of the first part 1111 of the molding member 1110 maybe straightened to be flat and may be located at substantially the samelevel so as to be substantially coplanar with bottom surfaces of thesecond and third parts 1112 and 1113 of the molding member 1110. In sucha case, the a top surface of the first part 1111 of the molding member1110 may also be straightened to be flat and may be located atsubstantially the same level so as to be substantially coplanar with topsurfaces of the second and third parts 1112 and 1113 of the moldingmember 1110.

FIG. 19 is a cross-sectional view illustrating a semiconductor device1300 including the semiconductor package 1100 shown in FIG. 17. In FIG.19, the same reference numerals used in FIG. 17 denote the sameelements. Thus, to avoid duplicate explanation, description of the sameelements as set forth with reference to FIG. 17 will be omitted orbriefly mentioned hereinafter. Referring to FIG. 19, the semiconductordevice 1300 may include the semiconductor package 1100 described withreference to FIG. 17 and a substrate 1310 on which the semiconductorpackage 1100 is mounted. In the present embodiment, the substrate 1310may be a printed circuit board (PCB). For example, the substrate 1310may be a motherboard constituting an electronic system. The substrate1310 may be comprised of a flexible and extendible material. Theflexible and extendible material used as the substrate 1310 may includea polymer-based material. In an embodiment, the polymer-based materialmay include a polydimethylsiloxane (PDMS) material, apoly-ethylene-terephthalate (PET) material, a polyimide (PI) material,or a silicone material. Interconnection lines 1320 may be disposed inthe substrate 1310. Each of the interconnection lines 1320 may becomprised of a conductive material such as a metal material and may havea curved line shape to be extendible or stretchable. In an embodiment,each of the interconnection lines 1320 may have a sine wave form and maybe disposed along a horizontal direction, for example, a lengthdirection of the substrate 1310.

First conductive patterns 1331 and second conductive patterns 1332 maybe disposed in the substrate 1310. Sidewalls and bottom surfaces of thefirst and second conductive patterns 1331 and 1332 may be surrounded bythe substrate 1310, and top surfaces of the first and second conductivepatterns 1331 and 1332 may be exposed at a top surface of the substrate1310. The exposed top surfaces of the first conductive patterns 1331 maybe coupled to the first connectors 1131 through first joint electrodes1341, respectively. Similarly, the exposed top surfaces of the secondconductive patterns 1332 may be coupled to the second connectors 1132through second joint electrodes 1342, respectively. Each of the firstand second joint electrodes 1341 and 1342 may be comprised of aconductive material, for example, a metal bump, or a solder ball.

FIG. 20 is a cross-sectional view illustrating a stretched shape of thesemiconductor device 1300 shown in FIG. 19. In FIG. 20, the samereference numerals used in FIG. 19 denote the same elements. Referringto FIG. 20, if a tensile force is applied to both ends of the substrate1310 in opposite horizontal directions 1410, the substrate 1310 mayextend in a horizontal direction. In such a case, a tensile force mayalso be applied to both ends of the semiconductor package 1100, whichmay be attached to the substrate 1310 using a soldering technique, inopposite horizontal directions 1420. Accordingly, as described withreference to FIG. 18, the molding member 1110 may extend in thehorizontal direction so that the warped shaped chip 1120 getsstraightened to have a flat form. As a result, the semiconductor device1300 may be stretched in the horizontal direction.

FIG. 21 is a cross-sectional view illustrating a warped shape of thesemiconductor device 1300 shown in FIG. 19. In FIG. 21, the samereference numerals used in FIG. 19 denote the same elements. Referringto FIG. 21, if an external force is applied to both ends of thesubstrate 1310 in an upward direction 1430, the both ends of thesubstrate 1310 may warp upwardly so that the substrate 1310 has a smileshape. In such a case, the semiconductor package 1100, which may beattached to the substrate 1310 using a soldering technique, may alsowarp to have the same shape as the substrate 1310. As a result, the chip1120 in the molding member 1110 may be straightened to have a flat form.

FIG. 22 is a cross-sectional view illustrating another semiconductordevice 1500 including the semiconductor package 1100 shown in FIG. 17.In FIG. 17, the same reference numerals used in FIG. 17 denote the sameelements. Thus, to avoid duplicate explanation, description of the sameelements as set forth with reference to FIG. 17 will be omitted orbriefly mentioned hereinafter. Referring to FIG. 22, the semiconductordevice 1500 may be configured to include an underfill layer 1510disposed between the semiconductor package 1100 and the substrate 1310.The underfill layer 1510 may be comprised of an extendible material or astretchable material. Alternatively, the underfill layer 1510 may becomprised of an extendible and flexible material. In an embodiment, theunderfill layer 1510 may be comprised of substantially the same materialas the molding member 1110 or the substrate 1310. A bottom surface ofthe underfill layer 1510 may be attached to a top surface of thesubstrate 1310. Both ends of a top surface of the underfill layer 1510may be attached to bottom surfaces of the second and third parts 1112and 1113 of the molding member 1110, respectively. A central portion ofthe top surface of the underfill layer 1510 may be spaced apart from abottom surface of the first part 1111 of the molding member 1110. Theunderfill layer 1510 may be disposed to surround and attach to sidewallsof the first and second joint electrodes 1341 and 1342. When thesemiconductor device 1500 extends or warps, the underfill layer 1510 mayalso extend or warp. In such a case, the underfill layer 1510 mayimprove coherence between the semiconductor package 1100 and thesubstrate 1310. In addition, the underfill layer 1510 may enhance acombination strength between the first connectors 1131, the firstconductive patterns 1331, and the first joint electrodes 1341, as wellas a combination strength between the second connectors 1132, the secondconductive patterns 1332, and the second joint electrodes 1342.

FIG. 23 is a cross-sectional view illustrating a stretched shape of thesemiconductor device 1500 shown in FIG. 22. In FIG. 23, the samereference numerals used in FIG. 22 denote the same elements. Referringto FIG. 23, if a tensile force is applied to both ends of the substrate1310 in opposite horizontal directions 1440, the substrate 1310 mayextend in a horizontal direction. In such a case, a tensile force mayalso be applied to both ends of the semiconductor package 1100 and bothends of the underfill layer 1510 in opposite horizontal directions 1450.Accordingly, the underfill layer 1510 may extend in the horizontaldirection. In addition, as described with reference to FIG. 18, thefirst part 1111 of the molding member 1110 may also extend in thehorizontal direction so that the warped shaped chip 1120 getsstraightened to have a flat form.

FIG. 24 is a cross-sectional view illustrating a warped shape of thesemiconductor device 1500 shown in FIG. 22. In FIG. 24, the samereference numerals used in FIG. 22 denote the same elements. Referringto FIG. 24, if an external force is applied to both ends of thesubstrate 1310 in an upward direction 1460, both ends of the substrate1310 may warp upwardly so that the substrate 1310 and the underfilllayer 1510 have a smile shape. In such a case, the semiconductor package1100 may also warp to have the same shape as the substrate 1310 and theunderfill layer 1510. As a result, the warped shaped chip 1120 in themolding member 1110 may be straightened to have a flat form.

The embodiments of the present disclosure have been disclosed above forillustrative purposes. Those of ordinary skill in the art willappreciate that various modifications, additions, and substitutions arepossible, without departing from the scope and spirit of the presentdisclosure as disclosed in the accompanying claims.

The stretchable semiconductor package (see FIGS. 1-24) are particularuseful in the design of memory devices, processors, and computersystems. For example, referring to FIG. 25, a block diagram of a systememploying a stretchable semiconductor package in accordance with thevarious embodiments are illustrated and generally designated by areference numeral 2000. The system 2000 may include one or moreprocessors (i.e., Processor) or, for example but not limited to, centralprocessing units (“CPUs”) 2100. The processor (i.e., CPU) 2100 may beused individually or in combination with other processors (i.e., CPUs).While the processor (i.e., CPU) 2100 will be referred to primarily inthe singular, it will be understood by those skilled in the art that asystem 2000 with any number of physical or logical processors (i.e.,CPUs) may be implemented.

A chipset 2150 may be operably coupled to the processor (i.e., CPU)2100. The chipset 2150 is a communication pathway for signals betweenthe processor (i.e., CPU) 2100 and other components of the system 2000.Other components of the system 2000 may include a memory controller2200, an input/output (“I/O”) bus 2250, and a disk driver controller2300. Depending on the configuration of the system 2000, any one of anumber of different signals may be transmitted through the chipset 2150,and those skilled in the art will appreciate that the routing of thesignals throughout the system 2000 can be readily adjusted withoutchanging the underlying nature of the system 2000.

As stated above, the memory controller 2200 may be operably coupled tothe chipset 2150. The memory controller 2200 may include at least onestretchable semiconductor package discussed above with reference toFIGS. 1-24. Thus, the memory controller 2200 can receive a requestprovided from the processor (i.e., CPU) 2100, through the chipset 2150.In alternate embodiments, the memory controller 2200 may be integratedinto the chipset 2150. The memory controller 2200 may be operablycoupled to one or more memory devices 2350. In an embodiment, the memorydevices 2350 may include the at least one stretchable semiconductorpackage as discussed above with relation to FIGS. 1-24, the memorydevices 2350 may include a plurality of word lines and a plurality ofbit lines for defining a plurality of memory cells. The memory devices2350 may be any one of a number of industry standard memory types,including but not limited to, single inline memory modules (“SIMMs”) anddual inline memory modules (“DIMMs”). Further, the memory devices 2350may facilitate the safe removal of the external data storage devices bystoring both instructions and data.

The chipset 2150 may also be coupled to the I/O bus 2250. The I/O bus2250 may serve as a communication pathway for signals from the chipset2150 to I/O devices 2410, 2420, and 2430. The I/O devices 2410, 2420,and 2430 may include, for example but are not limited to, a mouse 2410,a video display 2420, or a keyboard 2430. The I/O bus 2250 may employany one of a number of communications protocols to communicate with theI/O devices 2410, 2420, and 2430. In an embodiment, the I/O bus 2250 maybe integrated into the chipset 2150.

The disk driver controller 2300 may be operably coupled to the chipset2150. The disk driver controller 2300 may serve as the communicationpathway between the chipset 2150 and one internal disk driver 2450 ormore than one internal disk driver 2450. The internal disk driver 2450may facilitate disconnection of the external data storage devices bystoring both instructions and data. The disk driver controller 2300 andthe internal disk driver 2450 may communicate with each other or withthe chipset 2150 using virtually any type of communication protocol,including, for example but not limited to, all of those mentioned abovewith regard to the I/O bus 2250.

It is important to note that the system 2000 described above in relationto FIG. 25 is merely one example of a system 2000 employing astretchable semiconductor package as discussed above with relation toFIGS. 1-24. In alternate embodiments, such as, for example but notlimited to, cellular phones or digital cameras, the components maydiffer from the embodiments illustrated in FIG. 25.

FIG. 25 illustrates a block diagram of an example of a representation ofa system employing stretchable semiconductor devices in accordance withthe various embodiments discussed above with relation to FIGS. 1-24.

What is claimed is:
 1. A semiconductor package comprising: a moldingmember comprised of an extendible material, wherein the molding memberincludes a first part having a warped shape, a second part extendingfrom one end of the first part to be flat, and a third part extendingfrom the other end of the first part to be flat; a chip embedded in themolding member to have a warped shape; and connectors disposed in themolding member, wherein first surfaces of the connectors are exposed ata surface of the molding member and second surfaces of the connectorsare coupled to the chip.
 2. The semiconductor package of claim 1,wherein the molding member includes a polymer-based material.
 3. Thesemiconductor package of claim 2, wherein the polymer-based materialincludes a polydimethylsiloxane (PDMS) material, apoly-ethylene-terephthalate (PET) material, a polyimide (PI) material,or a silicone material.
 4. The semiconductor package of claim 1, whereinthe first part of the molding member warps so that a central portion ofthe first part of the molding member is located at a higher level thanboth ends of the first part of the molding member.
 5. The semiconductorpackage of claim 4, wherein the chip is disposed in the first part ofthe molding member.
 6. The semiconductor package of claim 5, wherein thechip includes contact pads disposed in a first surface of the chip. 7.The semiconductor package of claim 6, wherein the chip is disposed sothat the first surface of the chip faces downward.
 8. The semiconductorpackage of claim 7, wherein both ends of the chip bend in a downwarddirection to be located at a lower level than a central portion of thechip.
 9. The semiconductor package of claim 1, wherein each of theconnectors comprises a bump.
 10. The semiconductor package of claim 1,further comprising interconnectors that electrically connect the chip tothe connectors.
 11. The semiconductor package of claim 10, wherein eachof the interconnectors is a plate-shaped electrode.
 12. Thesemiconductor package of claim 11, wherein each of the interconnectorsincludes: a horizontal portion that contacts the second surface of oneof the connectors; and an inclined portion that extends from an end ofthe horizontal portion to contact one of contact pads of the chip. 13.The semiconductor package of claim 12, wherein both ends of the chipbend in a downward direction to be located at a lower level than acentral portion of the chip; and wherein a tilt angle of the inclinedportion is substantially equal to an arctangent value of a maximum slopeof one of the both ends of chip.
 14. A semiconductor device comprising:a substrate comprised of a flexible and extendible material, wherein thesubstrate includes conductive patterns disposed therein and theconductive patterns are exposed at a surface of the substrate; asemiconductor package including an extendible molding member, a chipembedded in the molding member to have a warped shape, and connectorsdisposed in the molding member, wherein first surfaces of the connectorsare exposed at a surface of the molding member and second surfaces ofthe connectors are coupled to the chip; and joint electrodes connectingthe conductive patterns to the connectors, wherein the molding memberincludes a first part having a warped shape, a second part extendingfrom one end of the first part to be flat, and a third part extendingfrom the other end of the first part to be flat.
 15. The semiconductordevice of claim 14, wherein the substrate further includesinterconnection lines disposed therein.
 16. The semiconductor device ofclaim 15, wherein each of the interconnection lines has a sine wave formand is disposed along a horizontal direction.
 17. The semiconductordevice of claim 14, further comprising an underfill layer disposedbetween the substrate and the semiconductor package.
 18. Thesemiconductor device of claim 17, wherein a bottom surface and a topsurface of the underfill layer are attached to a top surface of thesubstrate and a bottom surface of the molding member, respectively; andwherein the underfill layer is attached to sidewalls of the jointelectrodes.
 19. The semiconductor device of claim 17, wherein theunderfill layer is comprised of an extendible material.